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Contrast of 83% in reflection measurements on a single quantum dot

We report on a high optical contrast between the photon emission from a single self-assembled quantum dot (QD) and the back-scattered excitation laser light. In an optimized semiconductor heterostructure with an epitaxially grown gate, an optically-matched layer structure and a distributed Bragg ref...

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Detalles Bibliográficos
Autores principales: Lochner, Pia, Kurzmann, Annika, Schott, Rüdiger, Wieck, Andreas D., Ludwig, Arne, Lorke, Axel, Geller, Martin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6584550/
https://www.ncbi.nlm.nih.gov/pubmed/31217487
http://dx.doi.org/10.1038/s41598-019-45259-z
Descripción
Sumario:We report on a high optical contrast between the photon emission from a single self-assembled quantum dot (QD) and the back-scattered excitation laser light. In an optimized semiconductor heterostructure with an epitaxially grown gate, an optically-matched layer structure and a distributed Bragg reflector, a record value of 83% is obtained; with tilted laser excitation even 885%. This enables measurements on a single dot without lock-in technique or suppression of the laser background by cross-polarization. These findings open up the possibility to perform simultaneously time-resolved and polarization-dependent resonant optical spectroscopy on a single quantum dot.