Structural and Photoelectric Properties of Epitaxially Grown Vanadium Dioxide Thin Films on c-Plane Sapphire and Titanium Dioxide

Vanadium dioxide (VO(2)) is one of the most extensively studied materials in the strongly correlated electron family capable of sustaining an insulator-to-metal transition. Here we present our studies of high-quality thin films of epitaxially grown VO(2) on c-Al(2)O(3)(0001) and TiO(2)(001) via reac...

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Detalles Bibliográficos
Autores principales: Creeden, Jason A., Madaras, Scott E., Beringer, Douglas B., Beebe, Melissa R., Novikova, Irina, Lukaszew, R. Ale
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6597701/
https://www.ncbi.nlm.nih.gov/pubmed/31249373
http://dx.doi.org/10.1038/s41598-019-45806-8
Descripción
Sumario:Vanadium dioxide (VO(2)) is one of the most extensively studied materials in the strongly correlated electron family capable of sustaining an insulator-to-metal transition. Here we present our studies of high-quality thin films of epitaxially grown VO(2) on c-Al(2)O(3)(0001) and TiO(2)(001) via reactive DC pulsed magnetron sputtering. We present the structural transition probed via Reflection High Energy Electron Diffraction (RHEED) for the first time and we correlate the surface microstructure measurements with simulations before, during, and after the thermally induced transition. We also study the photoelectric conversion of VO(2) on TiO(2)(001) and c-Al(2)O(3)(0001) under 405 nm light and demonstrate up to a 2000% increase in quantum efficiency as the power of the light is varied for VO(2) on TiO(2)(001).

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