Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si(1−x)Ge(x) Thin-Film Transistors

We investigated the characteristics of excimer laser-annealed polycrystalline silicon–germanium (poly-Si(1−x)Ge(x)) thin film and thin-film transistor (TFT). The Ge concentration was increased from 0% to 12.3% using a SiH(4) and GeH(4) gas mixture, and a Si(1−x)Ge(x) thin film was crystallized using...

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Detalles Bibliográficos
Autores principales: Jang, Kyungsoo, Kim, Youngkuk, Park, Joonghyun, Yi, Junsin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6600783/
https://www.ncbi.nlm.nih.gov/pubmed/31146346
http://dx.doi.org/10.3390/ma12111739

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6600783/
https://www.ncbi.nlm.nih.gov/pubmed/31146346
http://dx.doi.org/10.3390/ma12111739

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