Tuning the Polarity of MoTe(2) FETs by Varying the Channel Thickness for Gas-Sensing Applications

In this study, electrical characteristics of MoTe(2) field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe(2) crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe(2) channel...

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Detalles Bibliográficos
Autores principales: Rani, Asha, DiCamillo, Kyle, Khan, Md Ashfaque Hossain, Paranjape, Makarand, Zaghloul, Mona E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6603731/
https://www.ncbi.nlm.nih.gov/pubmed/31167486
http://dx.doi.org/10.3390/s19112551
Descripción
Sumario:In this study, electrical characteristics of MoTe(2) field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe(2) crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe(2) channel thickness from 10.6 nm to 56.7 nm. This change in flake-thickness-dependent conducting behavior of MoTe(2) FETs can be attributed to modulation of the Schottky barrier height and related bandgap alignment. Change in polarity as a function of channel thickness variation is also used for ammonia (NH(3)) sensing, which confirms the p- and n-type behavior of MoTe(2) devices.

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