ZnO-Controlled Growth of Monolayer WS(2) through Chemical Vapor Deposition

Monolayer tungsten disulfide (2D WS(2)) films have attracted tremendous interest due to their unique electronic and optoelectronic properties. However, the controlled growth of monolayer WS(2) is still challenging. In this paper, we report a novel method to grow WS(2) through chemical vapor depositi...

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Detalles Bibliográficos
Autores principales: Xu, Zhuhua, Lv, Yanfei, Huang, Feng, Zhao, Cong, Zhao, Shichao, Wei, Guodan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630646/
https://www.ncbi.nlm.nih.gov/pubmed/31212730
http://dx.doi.org/10.3390/ma12121883
Descripción
Sumario:Monolayer tungsten disulfide (2D WS(2)) films have attracted tremendous interest due to their unique electronic and optoelectronic properties. However, the controlled growth of monolayer WS(2) is still challenging. In this paper, we report a novel method to grow WS(2) through chemical vapor deposition (CVD) with ZnO crystalline whisker as a growth promoter, where partially evaporated WS(2) reacts with ZnO to form ZnWO(4) by-product. As a result, a depletion region of W atoms and S-rich region is formed which is favorable for subsequent monolayer growth of WS(2), selectively positioned on the silicon oxide substrate after the CVD growth.

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