ZnO-Controlled Growth of Monolayer WS(2) through Chemical Vapor Deposition

Monolayer tungsten disulfide (2D WS(2)) films have attracted tremendous interest due to their unique electronic and optoelectronic properties. However, the controlled growth of monolayer WS(2) is still challenging. In this paper, we report a novel method to grow WS(2) through chemical vapor depositi...

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Detalles Bibliográficos
Autores principales: Xu, Zhuhua, Lv, Yanfei, Huang, Feng, Zhao, Cong, Zhao, Shichao, Wei, Guodan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630646/
https://www.ncbi.nlm.nih.gov/pubmed/31212730
http://dx.doi.org/10.3390/ma12121883
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author Xu, Zhuhua
Lv, Yanfei
Huang, Feng
Zhao, Cong
Zhao, Shichao
Wei, Guodan
author_facet Xu, Zhuhua
Lv, Yanfei
Huang, Feng
Zhao, Cong
Zhao, Shichao
Wei, Guodan
author_sort Xu, Zhuhua
collection PubMed
description Monolayer tungsten disulfide (2D WS(2)) films have attracted tremendous interest due to their unique electronic and optoelectronic properties. However, the controlled growth of monolayer WS(2) is still challenging. In this paper, we report a novel method to grow WS(2) through chemical vapor deposition (CVD) with ZnO crystalline whisker as a growth promoter, where partially evaporated WS(2) reacts with ZnO to form ZnWO(4) by-product. As a result, a depletion region of W atoms and S-rich region is formed which is favorable for subsequent monolayer growth of WS(2), selectively positioned on the silicon oxide substrate after the CVD growth.
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spelling pubmed-66306462019-08-19 ZnO-Controlled Growth of Monolayer WS(2) through Chemical Vapor Deposition Xu, Zhuhua Lv, Yanfei Huang, Feng Zhao, Cong Zhao, Shichao Wei, Guodan Materials (Basel) Article Monolayer tungsten disulfide (2D WS(2)) films have attracted tremendous interest due to their unique electronic and optoelectronic properties. However, the controlled growth of monolayer WS(2) is still challenging. In this paper, we report a novel method to grow WS(2) through chemical vapor deposition (CVD) with ZnO crystalline whisker as a growth promoter, where partially evaporated WS(2) reacts with ZnO to form ZnWO(4) by-product. As a result, a depletion region of W atoms and S-rich region is formed which is favorable for subsequent monolayer growth of WS(2), selectively positioned on the silicon oxide substrate after the CVD growth. MDPI 2019-06-12 /pmc/articles/PMC6630646/ /pubmed/31212730 http://dx.doi.org/10.3390/ma12121883 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Xu, Zhuhua
Lv, Yanfei
Huang, Feng
Zhao, Cong
Zhao, Shichao
Wei, Guodan
ZnO-Controlled Growth of Monolayer WS(2) through Chemical Vapor Deposition
title ZnO-Controlled Growth of Monolayer WS(2) through Chemical Vapor Deposition
title_full ZnO-Controlled Growth of Monolayer WS(2) through Chemical Vapor Deposition
title_fullStr ZnO-Controlled Growth of Monolayer WS(2) through Chemical Vapor Deposition
title_full_unstemmed ZnO-Controlled Growth of Monolayer WS(2) through Chemical Vapor Deposition
title_short ZnO-Controlled Growth of Monolayer WS(2) through Chemical Vapor Deposition
title_sort zno-controlled growth of monolayer ws(2) through chemical vapor deposition
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630646/
https://www.ncbi.nlm.nih.gov/pubmed/31212730
http://dx.doi.org/10.3390/ma12121883
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