Near-Infrared Optical Modulation for Ultrashort Pulse Generation Employing Indium Monosulfide (InS) Two-Dimensional Semiconductor Nanocrystals

In recent years, metal chalcogenide nanomaterials have received much attention in the field of ultrafast lasers due to their unique band-gap characteristic and excellent optical properties. In this work, two-dimensional (2D) indium monosulfide (InS) nanosheets were synthesized through a modified liquid-phase exfoliation method. In addition, a film-type InS-polyvinyl alcohol (PVA) saturable absorber (SA) was prepared as an optical modulator to generate ultrashort pulses. The nonlinear properties of the InS-PVA SA were systematically investigated. The modulation depth and saturation intensity of the InS-SA were 5.7% and 6.79 MW/cm(2), respectively. By employing this InS-PVA SA, a stable, passively mode-locked Yb-doped fiber laser was demonstrated. At the fundamental frequency, the laser operated at 1.02 MHz, with a pulse width of 486.7 ps, and the maximum output power was 1.91 mW. By adjusting the polarization states in the cavity, harmonic mode-locked phenomena were also observed. To our knowledge, this is the first time an ultrashort pulse output based on InS has been achieved. The experimental findings indicate that InS is a viable candidate in the field of ultrafast lasers due to its excellent saturable absorption characteristics, which thereby promotes the ultrafast optical applications of InX (X = S, Se, and Te) and expands the category of new SAs.