Resistance Switching Statistics and Mechanisms of Pt Dispersed Silicon Oxide-Based Memristors

Silicon oxide-based memristors have been extensively studied due to their compatibility with the dominant silicon complementary metal–oxide–semiconductor (CMOS) fabrication technology. However, the variability of resistance switching (RS) parameters is one of the major challenges for commercializati...

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Detalles Bibliográficos
Autores principales: Lian, Xiaojuan, Shen, Xinyi, Lu, Liqun, He, Nan, Wan, Xiang, Samanta, Subhranu, Tong, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6631129/
https://www.ncbi.nlm.nih.gov/pubmed/31159392
http://dx.doi.org/10.3390/mi10060369

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6631129/
https://www.ncbi.nlm.nih.gov/pubmed/31159392
http://dx.doi.org/10.3390/mi10060369

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