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Resistance Switching Statistics and Mechanisms of Pt Dispersed Silicon Oxide-Based Memristors
Silicon oxide-based memristors have been extensively studied due to their compatibility with the dominant silicon complementary metal–oxide–semiconductor (CMOS) fabrication technology. However, the variability of resistance switching (RS) parameters is one of the major challenges for commercializati...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6631129/ https://www.ncbi.nlm.nih.gov/pubmed/31159392 http://dx.doi.org/10.3390/mi10060369 |