Synthesis and Physicochemical Properties of Piceno[4,3-b:9,10-b′]dithiophene Derivatives and Their Application in Organic Field-Effect Transistors

[Image: see text] Efficient synthesis and characterization of several piceno[4,3-b:9,10-b′]dithiophene (PiDT) derivatives by Negishi coupling, epoxidation, and Lewis acid-catalyzed cycloaromatization sequences and their potential utility in organic field-effect transistors (OFETs) have been reported...

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Autores principales: Hyodo, Keita, Toyama, Ryota, Mori, Hiroki, Nishihara, Yasushi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641018/
https://www.ncbi.nlm.nih.gov/pubmed/31457231
http://dx.doi.org/10.1021/acsomega.7b00015
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author Hyodo, Keita
Toyama, Ryota
Mori, Hiroki
Nishihara, Yasushi
author_facet Hyodo, Keita
Toyama, Ryota
Mori, Hiroki
Nishihara, Yasushi
author_sort Hyodo, Keita
collection PubMed
description [Image: see text] Efficient synthesis and characterization of several piceno[4,3-b:9,10-b′]dithiophene (PiDT) derivatives by Negishi coupling, epoxidation, and Lewis acid-catalyzed cycloaromatization sequences and their potential utility in organic field-effect transistors (OFETs) have been reported. PiDT derivatives, with extended π-electron systems, showed high air stability due to their deep highest occupied molecular orbital energy levels (around −5.6 eV). OFET devices based on 2,11-dioctylated PiDT (C(8)-PiDT) showed excellent hole mobility, as high as 2.36 cm(2) V(–1) s(–1). Their structure–property relationships were investigated by X-ray diffraction and atomic force microscopy.
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spelling pubmed-66410182019-08-27 Synthesis and Physicochemical Properties of Piceno[4,3-b:9,10-b′]dithiophene Derivatives and Their Application in Organic Field-Effect Transistors Hyodo, Keita Toyama, Ryota Mori, Hiroki Nishihara, Yasushi ACS Omega [Image: see text] Efficient synthesis and characterization of several piceno[4,3-b:9,10-b′]dithiophene (PiDT) derivatives by Negishi coupling, epoxidation, and Lewis acid-catalyzed cycloaromatization sequences and their potential utility in organic field-effect transistors (OFETs) have been reported. PiDT derivatives, with extended π-electron systems, showed high air stability due to their deep highest occupied molecular orbital energy levels (around −5.6 eV). OFET devices based on 2,11-dioctylated PiDT (C(8)-PiDT) showed excellent hole mobility, as high as 2.36 cm(2) V(–1) s(–1). Their structure–property relationships were investigated by X-ray diffraction and atomic force microscopy. American Chemical Society 2017-01-30 /pmc/articles/PMC6641018/ /pubmed/31457231 http://dx.doi.org/10.1021/acsomega.7b00015 Text en Copyright © 2017 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes.
spellingShingle Hyodo, Keita
Toyama, Ryota
Mori, Hiroki
Nishihara, Yasushi
Synthesis and Physicochemical Properties of Piceno[4,3-b:9,10-b′]dithiophene Derivatives and Their Application in Organic Field-Effect Transistors
title Synthesis and Physicochemical Properties of Piceno[4,3-b:9,10-b′]dithiophene Derivatives and Their Application in Organic Field-Effect Transistors
title_full Synthesis and Physicochemical Properties of Piceno[4,3-b:9,10-b′]dithiophene Derivatives and Their Application in Organic Field-Effect Transistors
title_fullStr Synthesis and Physicochemical Properties of Piceno[4,3-b:9,10-b′]dithiophene Derivatives and Their Application in Organic Field-Effect Transistors
title_full_unstemmed Synthesis and Physicochemical Properties of Piceno[4,3-b:9,10-b′]dithiophene Derivatives and Their Application in Organic Field-Effect Transistors
title_short Synthesis and Physicochemical Properties of Piceno[4,3-b:9,10-b′]dithiophene Derivatives and Their Application in Organic Field-Effect Transistors
title_sort synthesis and physicochemical properties of piceno[4,3-b:9,10-b′]dithiophene derivatives and their application in organic field-effect transistors
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641018/
https://www.ncbi.nlm.nih.gov/pubmed/31457231
http://dx.doi.org/10.1021/acsomega.7b00015
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