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Computational Study of MoS(2)/HfO(2) Defective Interfaces for Nanometer-Scale Electronics

[Image: see text] Atomic structures and electronic properties of MoS(2)/HfO(2) defective interfaces are investigated extensively for future field-effect transistor device applications. To mimic the atomic layer deposition growth under ambient conditions, the impact of interfacial oxygen concentratio...

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Detalles Bibliográficos
Autores principales:	KC, Santosh, Longo, Roberto C., Wallace, Robert M., Cho, Kyeongjae
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2017
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641027/ https://www.ncbi.nlm.nih.gov/pubmed/31457620 http://dx.doi.org/10.1021/acsomega.7b00636

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