Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y(2)O(3) on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

[Image: see text] Y(2)O(3) was in situ deposited on a freshly grown molecular beam epitaxy GaAs(001)-4 × 6 surface by atomic layer deposition (ALD). In situ synchrotron radiation photoemission was used to study the mechanism of the tris(ethylcyclopentadienyl)yttrium [Y(CpEt)(3)] and H(2)O process. T...

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Detalles Bibliográficos
Autores principales: Cheng, Chiu-Ping, Chen, Wan-Sin, Cheng, Yi-Ting, Wan, Hsien-Wen, Yang, Cheng-Yeh, Pi, Tun-Wen, Kwo, Jueinai, Hong, Minghwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641429/
https://www.ncbi.nlm.nih.gov/pubmed/31458518
http://dx.doi.org/10.1021/acsomega.7b01564

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641429/
https://www.ncbi.nlm.nih.gov/pubmed/31458518
http://dx.doi.org/10.1021/acsomega.7b01564

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