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Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y(2)O(3) on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy
[Image: see text] Y(2)O(3) was in situ deposited on a freshly grown molecular beam epitaxy GaAs(001)-4 × 6 surface by atomic layer deposition (ALD). In situ synchrotron radiation photoemission was used to study the mechanism of the tris(ethylcyclopentadienyl)yttrium [Y(CpEt)(3)] and H(2)O process. T...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641429/ https://www.ncbi.nlm.nih.gov/pubmed/31458518 http://dx.doi.org/10.1021/acsomega.7b01564 |