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Adiabatic Quantum-Flux-Parametron: Towards Building Extremely Energy-Efficient Circuits and Systems
Adiabatic Quantum-Flux-Parametron (AQFP) logic is an adiabatic superconductor logic family that has been proposed as a future technology towards building extremely energy-efficient computing systems. In AQFP logic, dynamic energy dissipation can be drastically reduced due to the adiabatic switching...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6642163/ https://www.ncbi.nlm.nih.gov/pubmed/31324832 http://dx.doi.org/10.1038/s41598-019-46595-w |
Sumario: | Adiabatic Quantum-Flux-Parametron (AQFP) logic is an adiabatic superconductor logic family that has been proposed as a future technology towards building extremely energy-efficient computing systems. In AQFP logic, dynamic energy dissipation can be drastically reduced due to the adiabatic switching operations using AC excitation currents, which serve as both clock signals and power supplies. As a result, AQFP could overcome the power/energy dissipation limitation in conventional superconductor logic families such as rapid-single-flux-quantum (RSFQ). Simulation and experimental results show that AQFP logic can achieve an energy-delay-product (EDP) near quantum limit using practical circuit parameters and available fabrication processes. To shed some light on the design automation and guidelines of AQFP circuits, in this paper we present an automatic synthesis framework for AQFP and perform synthesis on 18 circuits, including 11 ISCAS-85 circuit benchmarks, 6 deep-learning accelerator components, and a 32-bit RISC-V ALU, based on our developed standard cell library of AQFP technology. Synthesis results demonstrate the significant advantage of AQFP technology. We forecast 9,313×, 25,242× and 48,466× energy-per-operation advantage, compared to the synthesis results of TSMC (Taiwan Semiconductor Manufacturing Company) 12 nm fin field-effect transistor (FinFET), 28 nm and 40 nm complementary metal-oxide-semiconductor (CMOS) technology nodes, respectively. |
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