Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS(2) Using MoO(3) Thin Film as a Precursor for Coevaporation

[Image: see text] Chemical vapor deposition (CVD) is a powerful method employed for high-quality monolayer crystal growth of 2D transition metal dichalcogenides with much effort invested toward improving the growth process. Here, we report a novel method for CVD-based growth of monolayer molybdenum...

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Detalles Bibliográficos
Autores principales: Withanage, Sajeevi S., Kalita, Hirokjyoti, Chung, Hee-Suk, Roy, Tania, Jung, Yeonwoong, Khondaker, Saiful I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6643554/
https://www.ncbi.nlm.nih.gov/pubmed/31458458
http://dx.doi.org/10.1021/acsomega.8b02978

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6643554/
https://www.ncbi.nlm.nih.gov/pubmed/31458458
http://dx.doi.org/10.1021/acsomega.8b02978

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