In Situ SiO(2) Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO(x) Atomic Layer Deposition Process

[Image: see text] In this work, an in situ SiO(2) passivation technique using atomic layer deposition (ALD) during the growth of gate dielectric TaSiO(x) on solid-source molecular beam epitaxy grown (100)In(x)Ga(1–x)As and (110)In(x)Ga(1–x)As on InP substrates is reported. X-ray reciprocal space map...

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Detalles Bibliográficos
Autores principales: Hudait, Mantu K., Clavel, Michael B., Liu, Jheng-Sin, Bhattacharya, Shuvodip
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6643752/
https://www.ncbi.nlm.nih.gov/pubmed/31458140
http://dx.doi.org/10.1021/acsomega.8b02314

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6643752/
https://www.ncbi.nlm.nih.gov/pubmed/31458140
http://dx.doi.org/10.1021/acsomega.8b02314

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