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High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In(x)Al(1–x)Sb Continuously Graded Buffer Layer
[Image: see text] In this paper, we report the growth of a high-quality 100 nm thick InSb layer on a (001) GaAs substrate for InSb-based high-speed electronic device applications. A continuously graded buffer (CGB) technique with In(x)Al(1–x)Sb was used to grow high-quality InSb films on GaAs substr...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644167/ https://www.ncbi.nlm.nih.gov/pubmed/31458139 http://dx.doi.org/10.1021/acsomega.8b02189 |