High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In(x)Al(1–x)Sb Continuously Graded Buffer Layer

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[Image: see text] In this paper, we report the growth of a high-quality 100 nm thick InSb layer on a (001) GaAs substrate for InSb-based high-speed electronic device applications. A continuously graded buffer (CGB) technique with In(x)Al(1–x)Sb was used to grow high-quality InSb films on GaAs substr...

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Detalles Bibliográficos
Autores principales: Kang, Soo Seok, Park, Suk In, Shin, Sang Hoon, Shim, Cheol-Hwee, Choi, Suk-Ho, Song, Jin Dong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644167/
https://www.ncbi.nlm.nih.gov/pubmed/31458139
http://dx.doi.org/10.1021/acsomega.8b02189
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