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Strain-Modulated Band Engineering in Two-Dimensional Black Phosphorus/MoS(2) van der Waals Heterojunction

[Image: see text] We investigate the band shift and band alignment of two-dimensional (2D) black phosphorus (BP)/MoS(2) van der Waals heterojunction (vdW HJ) via uniaxial strain in terms of first-principles calculations and atomic-bond-relaxation method. We find that the band gap of 2D BP/MoS(2) HJ...

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Detalles Bibliográficos
Autores principales:	Liao, Chengwei, Zhao, Yipeng, Ouyang, Gang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2018
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644261/ https://www.ncbi.nlm.nih.gov/pubmed/31458144 http://dx.doi.org/10.1021/acsomega.8b01767

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