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Fabrication of an Active Electronic Device Using a Hetero-bimetallic Coordination Polymer

[Image: see text] A nickel(II)/lead(II) coordination polymer [(NCS)Pb(H(2)O)LNi(NCS)](n) {H(2)L = N,N′-bis(3-methoxysalicylidene)propane-1,3-diamine} has been synthesized and characterized. The band gap (3.18 eV) calculated from Tauc’s plot suggests the semiconducting nature of the complex. The mate...

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Autores principales: Roy, Sourav, Halder, Soumi, Drew, Michael G. B., Ray, Partha Pratim, Chattopadhyay, Shouvik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644615/
https://www.ncbi.nlm.nih.gov/pubmed/31458004
http://dx.doi.org/10.1021/acsomega.8b02025
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author Roy, Sourav
Halder, Soumi
Drew, Michael G. B.
Ray, Partha Pratim
Chattopadhyay, Shouvik
author_facet Roy, Sourav
Halder, Soumi
Drew, Michael G. B.
Ray, Partha Pratim
Chattopadhyay, Shouvik
author_sort Roy, Sourav
collection PubMed
description [Image: see text] A nickel(II)/lead(II) coordination polymer [(NCS)Pb(H(2)O)LNi(NCS)](n) {H(2)L = N,N′-bis(3-methoxysalicylidene)propane-1,3-diamine} has been synthesized and characterized. The band gap (3.18 eV) calculated from Tauc’s plot suggests the semiconducting nature of the complex. The material has a photosensitivity of 5.76, indicating its applicability in the fabrication of photosensitive devices. The complex has been successfully applied in a technologically challenging thin-film photosensitive Schottky device.
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spelling pubmed-66446152019-08-27 Fabrication of an Active Electronic Device Using a Hetero-bimetallic Coordination Polymer Roy, Sourav Halder, Soumi Drew, Michael G. B. Ray, Partha Pratim Chattopadhyay, Shouvik ACS Omega [Image: see text] A nickel(II)/lead(II) coordination polymer [(NCS)Pb(H(2)O)LNi(NCS)](n) {H(2)L = N,N′-bis(3-methoxysalicylidene)propane-1,3-diamine} has been synthesized and characterized. The band gap (3.18 eV) calculated from Tauc’s plot suggests the semiconducting nature of the complex. The material has a photosensitivity of 5.76, indicating its applicability in the fabrication of photosensitive devices. The complex has been successfully applied in a technologically challenging thin-film photosensitive Schottky device. American Chemical Society 2018-10-08 /pmc/articles/PMC6644615/ /pubmed/31458004 http://dx.doi.org/10.1021/acsomega.8b02025 Text en Copyright © 2018 American Chemical Society This is an open access article published under a Creative Commons Attribution (CC-BY) License (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html) , which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
spellingShingle Roy, Sourav
Halder, Soumi
Drew, Michael G. B.
Ray, Partha Pratim
Chattopadhyay, Shouvik
Fabrication of an Active Electronic Device Using a Hetero-bimetallic Coordination Polymer
title Fabrication of an Active Electronic Device Using a Hetero-bimetallic Coordination Polymer
title_full Fabrication of an Active Electronic Device Using a Hetero-bimetallic Coordination Polymer
title_fullStr Fabrication of an Active Electronic Device Using a Hetero-bimetallic Coordination Polymer
title_full_unstemmed Fabrication of an Active Electronic Device Using a Hetero-bimetallic Coordination Polymer
title_short Fabrication of an Active Electronic Device Using a Hetero-bimetallic Coordination Polymer
title_sort fabrication of an active electronic device using a hetero-bimetallic coordination polymer
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644615/
https://www.ncbi.nlm.nih.gov/pubmed/31458004
http://dx.doi.org/10.1021/acsomega.8b02025
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