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Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy
[Image: see text] We report on extreme penetration power of relativistic electrons in a micrometer-thick gallium nitride epitaxial film and its application to probing threading dislocations, which were introduced during crystal growth. Maximum usable thickness of the specimen was quantitatively eval...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2018
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644655/ https://www.ncbi.nlm.nih.gov/pubmed/31458059 http://dx.doi.org/10.1021/acsomega.8b02078 |
Sumario: | [Image: see text] We report on extreme penetration power of relativistic electrons in a micrometer-thick gallium nitride epitaxial film and its application to probing threading dislocations, which were introduced during crystal growth. Maximum usable thickness of the specimen was quantitatively evaluated using high-voltage transmission electron microscopy (TEM) operating at 1 MV. The width of dislocation images was used as a measure for the evaluation of usable thickness. Superior maximum usable thickness was obtained in scanning transmission electron microscopy (STEM) than in TEM mode; the results were 6.9 μm for STEM and 4.4 μm for TEM. In STEM, dislocations can be imaged with an almost constant width of 15–20 nm in a wide thickness range 1–4 μm. The latest high-voltage STEM is thus useful for observing dislocations in micrometer-thick inorganic materials. |
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