Cargando…
Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy
[Image: see text] We report on extreme penetration power of relativistic electrons in a micrometer-thick gallium nitride epitaxial film and its application to probing threading dislocations, which were introduced during crystal growth. Maximum usable thickness of the specimen was quantitatively eval...
| Autores principales: | , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2018
|
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644655/ https://www.ncbi.nlm.nih.gov/pubmed/31458059 http://dx.doi.org/10.1021/acsomega.8b02078 |