Cargando…
Electronic Structures of Ge(2)Sb(2)Te(5)/Co(2)FeX (X: Al, Si) Interfaces for Phase Change Spintronics
[Image: see text] Phase change materials (PCMs), such as Ge(2)Sb(2)Te(5), are highly attractive in modern electronics and photonics. However, their spintronic applications remain largely unexplored. Here, we propose a tentative modality of phase change spintronic devices based on the ferromagnet/PCM...
Autores principales: | Li, Huanglong, Xu, Xintong |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2018
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644790/ https://www.ncbi.nlm.nih.gov/pubmed/31458131 http://dx.doi.org/10.1021/acsomega.8b02016 |
Ejemplares similares
-
Interface Analysis of MOCVD Grown GeTe/Sb(2)Te(3) and Ge-Rich Ge-Sb-Te/Sb(2)Te(3) Core-Shell Nanowires
por: Kumar, Arun, et al.
Publicado: (2022) -
Electrochemical metallization cell with solid phase tunable Ge(2)Sb(2)Te(5) electrolyte
por: Zhang, Ziyang, et al.
Publicado: (2018) -
Disorder and compositional dependences in Urbach-Martienssen tails in amorphous (GeTe)(x)(Sb(2)Te(3))(1−x) alloys
por: Shportko, K. V.
Publicado: (2019) -
Topological Surface‐Dominated Spintronic THz Emission in Topologically Nontrivial Bi(1−)
(x)
Sb
(x)
Films
por: Park, Hanbum, et al.
Publicado: (2022) -
Effects
of Intermixing
in Sb(2)Te(3)/Ge(1+x)Te
Multilayers on the Thermoelectric
Power Factor
por: Zhang, Heng, et al.
Publicado: (2023)