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Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors

[Image: see text] Poly(dimethylsiloxane) (PDMS) is a transparent and flexible elastomer which has a myriad of applications in various fields including organic electronics. However, the inherent hydrophobic nature and low surface energy of PDMS prevent its direct use in many applications. It is seldo...

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Autores principales: Raveendran, Reshma, Namboothiry, Manoj A. G.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6645575/
https://www.ncbi.nlm.nih.gov/pubmed/31459236
http://dx.doi.org/10.1021/acsomega.8b01629
_version_ 1783437491733266432
author Raveendran, Reshma
Namboothiry, Manoj A. G.
author_facet Raveendran, Reshma
Namboothiry, Manoj A. G.
author_sort Raveendran, Reshma
collection PubMed
description [Image: see text] Poly(dimethylsiloxane) (PDMS) is a transparent and flexible elastomer which has a myriad of applications in various fields including organic electronics. However, the inherent hydrophobic nature and low surface energy of PDMS prevent its direct use in many applications. It is seldom utilized as a gate dielectric in solution-processed organic field effect transistors (OFETs). In this work, we demonstrate a simple method, extended ultraviolet–ozone (UVO) treatment, to modify the PDMS surface and effectively employ it in solution-processed OFETs as a gate dielectric material. The modified PDMS surface shows enhanced wettability and adherence to both polar and nonpolar liquids, which is contrary to the generally observed hydrophilic nature of UVO-treated PDMS surfaces because of the creation of polar functional groups. The morphological changes happening on the PDMS surface as a result of extended UVO treatment play a major role in making the surface suitable for all type of solvents discussed here. The contact angle measurements are used to give qualitative evidence for this observation. The modified PDMS is then used as a gate dielectric in solution-processed n- and p-channel OFETs using [6,6]-phenyl-C61-butyric acid methyl ester (PC(60)BM) and regioregular poly(3-hexylthiophene) (rr-P3HT) semiconductors, respectively.
format Online
Article
Text
id pubmed-6645575
institution National Center for Biotechnology Information
language English
publishDate 2018
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-66455752019-08-27 Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors Raveendran, Reshma Namboothiry, Manoj A. G. ACS Omega [Image: see text] Poly(dimethylsiloxane) (PDMS) is a transparent and flexible elastomer which has a myriad of applications in various fields including organic electronics. However, the inherent hydrophobic nature and low surface energy of PDMS prevent its direct use in many applications. It is seldom utilized as a gate dielectric in solution-processed organic field effect transistors (OFETs). In this work, we demonstrate a simple method, extended ultraviolet–ozone (UVO) treatment, to modify the PDMS surface and effectively employ it in solution-processed OFETs as a gate dielectric material. The modified PDMS surface shows enhanced wettability and adherence to both polar and nonpolar liquids, which is contrary to the generally observed hydrophilic nature of UVO-treated PDMS surfaces because of the creation of polar functional groups. The morphological changes happening on the PDMS surface as a result of extended UVO treatment play a major role in making the surface suitable for all type of solvents discussed here. The contact angle measurements are used to give qualitative evidence for this observation. The modified PDMS is then used as a gate dielectric in solution-processed n- and p-channel OFETs using [6,6]-phenyl-C61-butyric acid methyl ester (PC(60)BM) and regioregular poly(3-hexylthiophene) (rr-P3HT) semiconductors, respectively. American Chemical Society 2018-09-17 /pmc/articles/PMC6645575/ /pubmed/31459236 http://dx.doi.org/10.1021/acsomega.8b01629 Text en Copyright © 2018 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes.
spellingShingle Raveendran, Reshma
Namboothiry, Manoj A. G.
Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors
title Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors
title_full Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors
title_fullStr Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors
title_full_unstemmed Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors
title_short Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors
title_sort surface-treated poly(dimethylsiloxane) as a gate dielectric in solution-processed organic field-effect transistors
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6645575/
https://www.ncbi.nlm.nih.gov/pubmed/31459236
http://dx.doi.org/10.1021/acsomega.8b01629
work_keys_str_mv AT raveendranreshma surfacetreatedpolydimethylsiloxaneasagatedielectricinsolutionprocessedorganicfieldeffecttransistors
AT namboothirymanojag surfacetreatedpolydimethylsiloxaneasagatedielectricinsolutionprocessedorganicfieldeffecttransistors