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Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors
[Image: see text] Poly(dimethylsiloxane) (PDMS) is a transparent and flexible elastomer which has a myriad of applications in various fields including organic electronics. However, the inherent hydrophobic nature and low surface energy of PDMS prevent its direct use in many applications. It is seldo...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2018
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6645575/ https://www.ncbi.nlm.nih.gov/pubmed/31459236 http://dx.doi.org/10.1021/acsomega.8b01629 |
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author | Raveendran, Reshma Namboothiry, Manoj A. G. |
author_facet | Raveendran, Reshma Namboothiry, Manoj A. G. |
author_sort | Raveendran, Reshma |
collection | PubMed |
description | [Image: see text] Poly(dimethylsiloxane) (PDMS) is a transparent and flexible elastomer which has a myriad of applications in various fields including organic electronics. However, the inherent hydrophobic nature and low surface energy of PDMS prevent its direct use in many applications. It is seldom utilized as a gate dielectric in solution-processed organic field effect transistors (OFETs). In this work, we demonstrate a simple method, extended ultraviolet–ozone (UVO) treatment, to modify the PDMS surface and effectively employ it in solution-processed OFETs as a gate dielectric material. The modified PDMS surface shows enhanced wettability and adherence to both polar and nonpolar liquids, which is contrary to the generally observed hydrophilic nature of UVO-treated PDMS surfaces because of the creation of polar functional groups. The morphological changes happening on the PDMS surface as a result of extended UVO treatment play a major role in making the surface suitable for all type of solvents discussed here. The contact angle measurements are used to give qualitative evidence for this observation. The modified PDMS is then used as a gate dielectric in solution-processed n- and p-channel OFETs using [6,6]-phenyl-C61-butyric acid methyl ester (PC(60)BM) and regioregular poly(3-hexylthiophene) (rr-P3HT) semiconductors, respectively. |
format | Online Article Text |
id | pubmed-6645575 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-66455752019-08-27 Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors Raveendran, Reshma Namboothiry, Manoj A. G. ACS Omega [Image: see text] Poly(dimethylsiloxane) (PDMS) is a transparent and flexible elastomer which has a myriad of applications in various fields including organic electronics. However, the inherent hydrophobic nature and low surface energy of PDMS prevent its direct use in many applications. It is seldom utilized as a gate dielectric in solution-processed organic field effect transistors (OFETs). In this work, we demonstrate a simple method, extended ultraviolet–ozone (UVO) treatment, to modify the PDMS surface and effectively employ it in solution-processed OFETs as a gate dielectric material. The modified PDMS surface shows enhanced wettability and adherence to both polar and nonpolar liquids, which is contrary to the generally observed hydrophilic nature of UVO-treated PDMS surfaces because of the creation of polar functional groups. The morphological changes happening on the PDMS surface as a result of extended UVO treatment play a major role in making the surface suitable for all type of solvents discussed here. The contact angle measurements are used to give qualitative evidence for this observation. The modified PDMS is then used as a gate dielectric in solution-processed n- and p-channel OFETs using [6,6]-phenyl-C61-butyric acid methyl ester (PC(60)BM) and regioregular poly(3-hexylthiophene) (rr-P3HT) semiconductors, respectively. American Chemical Society 2018-09-17 /pmc/articles/PMC6645575/ /pubmed/31459236 http://dx.doi.org/10.1021/acsomega.8b01629 Text en Copyright © 2018 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes. |
spellingShingle | Raveendran, Reshma Namboothiry, Manoj A. G. Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors |
title | Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric
in Solution-Processed Organic Field-Effect Transistors |
title_full | Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric
in Solution-Processed Organic Field-Effect Transistors |
title_fullStr | Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric
in Solution-Processed Organic Field-Effect Transistors |
title_full_unstemmed | Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric
in Solution-Processed Organic Field-Effect Transistors |
title_short | Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric
in Solution-Processed Organic Field-Effect Transistors |
title_sort | surface-treated poly(dimethylsiloxane) as a gate dielectric
in solution-processed organic field-effect transistors |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6645575/ https://www.ncbi.nlm.nih.gov/pubmed/31459236 http://dx.doi.org/10.1021/acsomega.8b01629 |
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