Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films

[Image: see text] Mixed films of a high-permittivity oxide, Er(2)O(3), and a magnetic material, Fe(2)O(3), were grown by atomic layer deposition on silicon and titanium nitride at 375 °C using erbium diketonate, ferrocene, and ozone as precursors. Crystalline phases of erbium and iron oxides were fo...

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Detalles Bibliográficos
Autores principales: Tamm, Aile, Kalam, Kristjan, Seemen, Helina, Kozlova, Jekaterina, Kukli, Kaupo, Aarik, Jaan, Link, Joosep, Stern, Raivo, Dueñas, Salvador, Castán, Helena
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6645657/
https://www.ncbi.nlm.nih.gov/pubmed/31457414
http://dx.doi.org/10.1021/acsomega.7b01394
Descripción
Sumario:[Image: see text] Mixed films of a high-permittivity oxide, Er(2)O(3), and a magnetic material, Fe(2)O(3), were grown by atomic layer deposition on silicon and titanium nitride at 375 °C using erbium diketonate, ferrocene, and ozone as precursors. Crystalline phases of erbium and iron oxides were formed. Growth into three-dimensional trenched structures was demonstrated. A structure deposited using tens to hundreds subsequent cycles for both constituent metal oxide layers promoted both charge polarization and saturative magnetization compared to those in the more homogeneously mixed films.

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