New 2D Structural Materials: Carbon–Gallium Nitride (CC–GaN) and Boron–Gallium Nitride (BN–GaN) Heterostructures—Materials Design Through Density Functional Theory

[Image: see text] New class of ternary nanohetrostructures have been proposed by mixing 2D gallium nitride (GaN) with graphene and 2D hexagonal boron nitride (BN) with an aim towards desgining innovative 2D materials for applications in electronics and other industries. The structural stability and...

Descripción completa

Detalles Bibliográficos
Autores principales: Elloh, Van W., Yaya, Abu, Gebreyesus, G., Dua, Piyush, Mishra, Abhishek K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6647944/
https://www.ncbi.nlm.nih.gov/pubmed/31459429
http://dx.doi.org/10.1021/acsomega.8b03025

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6647944/
https://www.ncbi.nlm.nih.gov/pubmed/31459429
http://dx.doi.org/10.1021/acsomega.8b03025

Ejemplares similares