Cargando…
Evolution of the Length and Radius of Catalyst-Free III–V Nanowires Grown by Selective Area Epitaxy
[Image: see text] We present a new model for the length and radius evolution of catalyst-free III–V nanowires grown by selective area epitaxy. We consider simultaneous axial and radial growth of nanowires, which is more typical for this technique compared to the vapor−liquid−solid growth of nanowire...
Autor principal: | Dubrovskii, Vladimir G. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2019
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648095/ https://www.ncbi.nlm.nih.gov/pubmed/31459928 http://dx.doi.org/10.1021/acsomega.9b00525 |
Ejemplares similares
-
Criterion for Selective Area Growth of III-V Nanowires
por: Dubrovskii, Vladimir G.
Publicado: (2022) -
Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches
por: Dubrovskii, Vladimir G.
Publicado: (2023) -
Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory
por: Gridchin, Vladislav O., et al.
Publicado: (2022) -
Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates
por: Dubrovskii, Vladimir G.
Publicado: (2022) -
Composition of Vapor–Liquid–Solid III–V Ternary Nanowires Based on Group-III Intermix
por: Dubrovskii, Vladimir G.
Publicado: (2023)