Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films

[Image: see text] In this work, we report the fabrication of nonvolatile memory devices based on chemical vapor deposition-grown copper polyphthalocyanine (CuPPc) thin films. The high polymerization degree and crystallinity of the as-obtained films were confirmed by transmission electron microscopy,...

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Detalles Bibliográficos
Autores principales: Guo, Xianfei, Liu, Jie, Cao, Lili, Liang, Qiu, Lei, Shengbin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648378/
https://www.ncbi.nlm.nih.gov/pubmed/31460136
http://dx.doi.org/10.1021/acsomega.9b01224
Descripción
Sumario:[Image: see text] In this work, we report the fabrication of nonvolatile memory devices based on chemical vapor deposition-grown copper polyphthalocyanine (CuPPc) thin films. The high polymerization degree and crystallinity of the as-obtained films were confirmed by transmission electron microscopy, X-ray photoelectron spectroscopy, and UV–vis studies. It was found that the device with Au/CuPPc/indium tin oxide sandwich structure exhibits good nonvolatile memory performance with a large ON/OFF current ratio of 10(3) and long retention time of 1.2 × 10(3) s.

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