Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films

[Image: see text] In this work, we report the fabrication of nonvolatile memory devices based on chemical vapor deposition-grown copper polyphthalocyanine (CuPPc) thin films. The high polymerization degree and crystallinity of the as-obtained films were confirmed by transmission electron microscopy,...

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Autores principales: Guo, Xianfei, Liu, Jie, Cao, Lili, Liang, Qiu, Lei, Shengbin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648378/
https://www.ncbi.nlm.nih.gov/pubmed/31460136
http://dx.doi.org/10.1021/acsomega.9b01224
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author Guo, Xianfei
Liu, Jie
Cao, Lili
Liang, Qiu
Lei, Shengbin
author_facet Guo, Xianfei
Liu, Jie
Cao, Lili
Liang, Qiu
Lei, Shengbin
author_sort Guo, Xianfei
collection PubMed
description [Image: see text] In this work, we report the fabrication of nonvolatile memory devices based on chemical vapor deposition-grown copper polyphthalocyanine (CuPPc) thin films. The high polymerization degree and crystallinity of the as-obtained films were confirmed by transmission electron microscopy, X-ray photoelectron spectroscopy, and UV–vis studies. It was found that the device with Au/CuPPc/indium tin oxide sandwich structure exhibits good nonvolatile memory performance with a large ON/OFF current ratio of 10(3) and long retention time of 1.2 × 10(3) s.
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spelling pubmed-66483782019-08-27 Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films Guo, Xianfei Liu, Jie Cao, Lili Liang, Qiu Lei, Shengbin ACS Omega [Image: see text] In this work, we report the fabrication of nonvolatile memory devices based on chemical vapor deposition-grown copper polyphthalocyanine (CuPPc) thin films. The high polymerization degree and crystallinity of the as-obtained films were confirmed by transmission electron microscopy, X-ray photoelectron spectroscopy, and UV–vis studies. It was found that the device with Au/CuPPc/indium tin oxide sandwich structure exhibits good nonvolatile memory performance with a large ON/OFF current ratio of 10(3) and long retention time of 1.2 × 10(3) s. American Chemical Society 2019-06-17 /pmc/articles/PMC6648378/ /pubmed/31460136 http://dx.doi.org/10.1021/acsomega.9b01224 Text en Copyright © 2019 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes.
spellingShingle Guo, Xianfei
Liu, Jie
Cao, Lili
Liang, Qiu
Lei, Shengbin
Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films
title Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films
title_full Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films
title_fullStr Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films
title_full_unstemmed Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films
title_short Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films
title_sort nonvolatile memory device based on copper polyphthalocyanine thin films
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648378/
https://www.ncbi.nlm.nih.gov/pubmed/31460136
http://dx.doi.org/10.1021/acsomega.9b01224
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AT liujie nonvolatilememorydevicebasedoncopperpolyphthalocyaninethinfilms
AT caolili nonvolatilememorydevicebasedoncopperpolyphthalocyaninethinfilms
AT liangqiu nonvolatilememorydevicebasedoncopperpolyphthalocyaninethinfilms
AT leishengbin nonvolatilememorydevicebasedoncopperpolyphthalocyaninethinfilms

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