Cargando…
Synthesis of Polytypic Gallium Phosphide and Gallium Arsenide Nanowires and Their Application as Photodetectors
[Image: see text] One-dimensional semiconductor nanowires often contain polytypic structures, owing to the co-existence of different crystal phases. Therefore, understanding the properties of polytypic structures is of paramount importance for many promising applications in high-performance nanodevi...
Autores principales: | Park, Kidong, Lee, Jinha, Kim, Doyeon, Seo, Jaemin, Kim, Jundong, Ahn, Jae-Pyoung, Park, Jeunghee |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2019
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648578/ https://www.ncbi.nlm.nih.gov/pubmed/31459529 http://dx.doi.org/10.1021/acsomega.8b03548 |
Ejemplares similares
-
Strain Mapping and Raman Spectroscopy of Bent GaP
and GaAs Nanowires
por: Im, Hyung Soon, et al.
Publicado: (2018) -
Gallium arsenide
por: Blakemore, John Sidney
Publicado: (1987) -
Efficient water reduction with gallium phosphide nanowires
por: Standing, Anthony, et al.
Publicado: (2015) -
An asynchronous microprocessor in gallium arsenide
por: Tierno, J A, et al.
Publicado: (1993) -
Gallium arsenide pixel detectors
por: Bates, R, et al.
Publicado: (1998)