Direct Synthesis of Large-Area Graphene on Insulating Substrates at Low Temperature using Microwave Plasma CVD

[Image: see text] With a combination of outstanding properties and a wide spectrum of applications, graphene has emerged as a significant nanomaterial. However, to realize its full potential for practical applications, a number of obstacles have to be overcome, such as low-temperature, transfer-free growth on desired substrates. In most of the reports, direct graphene growth is confined to either a small area or high sheet resistance. Here, an attempt has been made to grow large-area graphene directly on insulating substrates, such as quartz and glass, using magnetron-generated microwave plasma chemical vapor deposition at a substrate temperature of 300 °C with a sheet resistance of 1.3k Ω/□ and transmittance of 80%. Graphene is characterized using Raman microscopy, atomic force microscopy, scanning electron microscopy, optical imaging, UV–vis spectroscopy, and X-ray photoelectron spectroscopy. Four-probe resistivity and Hall effect measurements were performed to investigate electronic properties. Key to this report is the use of 0.3 sccm CO(2) during growth to put a control over vertical graphene growth, generally forming carbon walls, and 15–20 min of O(3) treatment on as-synthesized graphene to improve sheet carrier mobility and transmittance. This report can be helpful in growing large-area graphene directly on insulating transparent substrates at low temperatures with advanced electronic properties for applications in transparent conducting electrodes and optoelectronics.