Cargando…

Twofold Porosity and Surface Functionalization Effect on Pt–Porous GaN for High-Performance H(2)-Gas Sensors at Room Temperature

[Image: see text] The achievement of H(2) detection, up to 25 ppm, at room temperature using sulfur-treated, platinum (Pt)-decorated porous GaN is reported in this study. This achievement is attributed to the large lateral pore size, Pt catalyst, and surface treatment using organic sulfide. The perf...

Descripción completa

Detalles Bibliográficos
Autores principales:	Shafa, Muhammad, Priante, Davide, ElAfandy, Rami T., Hedhili, Mohamed Nejib, Mahmoud, Saleh T., Ng, Tien Khee, Ooi, Boon S., Najar, Adel
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2019
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648823/ https://www.ncbi.nlm.nih.gov/pubmed/31459424 http://dx.doi.org/10.1021/acsomega.8b02730

Ejemplares similares

On the phenomenon of large photoluminescence red shift in GaN nanoparticles
por: Slimane, Ahmed Ben, et al.
Publicado: (2013)

Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica
por: Prabaswara, Aditya, et al.
Publicado: (2019)

Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors
por: Liang, Jian-Wei, et al.
Publicado: (2022)

Optical Properties and First-Principles Study of CH(3)NH(3)PbBr(3) Perovskite Structures
por: Al Ghaithi, Asma O., et al.
Publicado: (2020)

Investigation of antireflective and hydrophobic properties in polycrystalline GaN films with dual porosity produced by CVD
por: Mena Gómez, Josue, et al.
Publicado: (2019)

Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth
por: Yoo, Yang-Seok, et al.
Publicado: (2017)

Room-Temperature Plasticity of a Nanosized GaN Crystal
por: Fujikane, Masaki, et al.
Publicado: (2021)

Electrodeposition of Pd-Pt Nanocomposites on Porous GaN for Electrochemical Nitrite Sensing
por: Xi, Rui, et al.
Publicado: (2019)

Pt nanoclusters on GaN nanowires for solar-asssisted seawater hydrogen evolution
por: Dong, Wan Jae, et al.
Publicado: (2023)

Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition
por: Mena, Josué, et al.
Publicado: (2021)

Twofold technique for iridodialysis repair
por: Narang, Priya, et al.
Publicado: (2022)

Room Temperature Operation of UV Photocatalytic Functionalized AlGaN/GaN Heterostructure Hydrogen Sensor
por: Choi, June-Heang, et al.
Publicado: (2021)

The Role of GaN in the Heterostructure WS(2)/GaN for SERS Applications
por: Ko, Tsung-Shine, et al.
Publicado: (2023)

Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging
por: Kusch, Gunnar, et al.
Publicado: (2018)

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
por: Sandupatla, Abhinay, et al.
Publicado: (2020)

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate
por: Wu, Peng, et al.
Publicado: (2022)

Laser slice thinning of GaN-on-GaN high electron mobility transistors
por: Tanaka, Atsushi, et al.
Publicado: (2022)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
por: Badokas, Kazimieras, et al.
Publicado: (2022)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2015)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2017)

Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors
por: Chakraborty, Surajit, et al.
Publicado: (2022)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature
por: Liu, Xingchen, et al.
Publicado: (2020)

Amphoteric arsenic in GaN
por: Wahl, U, et al.
Publicado: (2007)

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms
por: Zając, Magdalena A, et al.
Publicado: (2023)

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
por: Arteev, Dmitri S., et al.
Publicado: (2022)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)

Twofold processing for denoising ultrasound medical images
por: Kishore, P. V. V., et al.
Publicado: (2015)

Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation
por: Kumar, Ashish, et al.
Publicado: (2013)

Exploring an Approach toward the Intrinsic Limits of GaN Electronics
por: Jiang, Sheng, et al.
Publicado: (2020)

Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature
por: Khan, Md Ashfaque Hossain, et al.
Publicado: (2021)

Room-temperature tetragonal non-collinear Heusler antiferromagnet Pt(2)MnGa
por: Singh, Sanjay, et al.
Publicado: (2016)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
por: Grabowski, Mikolaj, et al.
Publicado: (2021)

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
por: Zhao, Ying, et al.
Publicado: (2020)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
por: Wang, Haiping, et al.
Publicado: (2022)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
por: Weng, You-Chen, et al.
Publicado: (2023)

Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface
por: Nishio, Kengo, et al.
Publicado: (2018)

Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors
por: Tanaka, Atsushi, et al.
Publicado: (2022)

Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature
por: Vuong, Tuan-Anh, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_8llpt1umsnva9efbv1kuq7590m