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Controlled Island Formation of Large-Area Graphene Sheets by Atmospheric Chemical Vapor Deposition: Role of Natural Camphor
[Image: see text] Camphor-based mono-/bilayer graphene (MLG) sheets have been synthesized by very facile atmospheric chemical vapor deposition processes on Si/SiO(2), soda lime glass, and flexible polyethylene terephthalate films. The effect of camphor concentration with respect to distance between...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2019
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648834/ https://www.ncbi.nlm.nih.gov/pubmed/31459965 http://dx.doi.org/10.1021/acsomega.9b00051 |
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author | Chaliyawala, Harsh A. Rajaram, Narasimman Patel, Roma Ray, Abhijit Mukhopadhyay, Indrajit |
author_facet | Chaliyawala, Harsh A. Rajaram, Narasimman Patel, Roma Ray, Abhijit Mukhopadhyay, Indrajit |
author_sort | Chaliyawala, Harsh A. |
collection | PubMed |
description | [Image: see text] Camphor-based mono-/bilayer graphene (MLG) sheets have been synthesized by very facile atmospheric chemical vapor deposition processes on Si/SiO(2), soda lime glass, and flexible polyethylene terephthalate films. The effect of camphor concentration with respect to distance between camphor and the Cu foil (D) has been varied to investigate the controlled formation of a homogeneous graphene sheet over a large area on Cu foil. Raman studies show a remarkable effect of camphor at a typical distance (D) to form a monolayer to multilayer graphene (MULG) sheet. The signature of MLG to MULG sheets appears due to increase in the number of nucleation sites, even over the subsequent domains that contribute stacks of graphene over each other as observed by high-resolution transmission electron microscopy images. Moreover, the increase in camphor concentration at a particular distance generates more defect states in graphene as denoted by D band at 1360 cm(–1). Uniform distribution of large-area MLG demonstrates an intense 2D/G ratio of ∼2.3. Electrical and optical measurements show a sheet resistance of ∼1 kΩ/sq with a maximum transmittance of ∼88% at 550 nm for low camphor concentration. An improvement in the rectification and photodiode behavior is observed from the diodes fabricated on n-Si/MULG as compared to n-Si/MLG in dark and light conditions. |
format | Online Article Text |
id | pubmed-6648834 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-66488342019-08-27 Controlled Island Formation of Large-Area Graphene Sheets by Atmospheric Chemical Vapor Deposition: Role of Natural Camphor Chaliyawala, Harsh A. Rajaram, Narasimman Patel, Roma Ray, Abhijit Mukhopadhyay, Indrajit ACS Omega [Image: see text] Camphor-based mono-/bilayer graphene (MLG) sheets have been synthesized by very facile atmospheric chemical vapor deposition processes on Si/SiO(2), soda lime glass, and flexible polyethylene terephthalate films. The effect of camphor concentration with respect to distance between camphor and the Cu foil (D) has been varied to investigate the controlled formation of a homogeneous graphene sheet over a large area on Cu foil. Raman studies show a remarkable effect of camphor at a typical distance (D) to form a monolayer to multilayer graphene (MULG) sheet. The signature of MLG to MULG sheets appears due to increase in the number of nucleation sites, even over the subsequent domains that contribute stacks of graphene over each other as observed by high-resolution transmission electron microscopy images. Moreover, the increase in camphor concentration at a particular distance generates more defect states in graphene as denoted by D band at 1360 cm(–1). Uniform distribution of large-area MLG demonstrates an intense 2D/G ratio of ∼2.3. Electrical and optical measurements show a sheet resistance of ∼1 kΩ/sq with a maximum transmittance of ∼88% at 550 nm for low camphor concentration. An improvement in the rectification and photodiode behavior is observed from the diodes fabricated on n-Si/MULG as compared to n-Si/MLG in dark and light conditions. American Chemical Society 2019-05-23 /pmc/articles/PMC6648834/ /pubmed/31459965 http://dx.doi.org/10.1021/acsomega.9b00051 Text en Copyright © 2019 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes. |
spellingShingle | Chaliyawala, Harsh A. Rajaram, Narasimman Patel, Roma Ray, Abhijit Mukhopadhyay, Indrajit Controlled Island Formation of Large-Area Graphene Sheets by Atmospheric Chemical Vapor Deposition: Role of Natural Camphor |
title | Controlled Island Formation of Large-Area Graphene
Sheets by Atmospheric Chemical Vapor Deposition: Role of Natural Camphor |
title_full | Controlled Island Formation of Large-Area Graphene
Sheets by Atmospheric Chemical Vapor Deposition: Role of Natural Camphor |
title_fullStr | Controlled Island Formation of Large-Area Graphene
Sheets by Atmospheric Chemical Vapor Deposition: Role of Natural Camphor |
title_full_unstemmed | Controlled Island Formation of Large-Area Graphene
Sheets by Atmospheric Chemical Vapor Deposition: Role of Natural Camphor |
title_short | Controlled Island Formation of Large-Area Graphene
Sheets by Atmospheric Chemical Vapor Deposition: Role of Natural Camphor |
title_sort | controlled island formation of large-area graphene
sheets by atmospheric chemical vapor deposition: role of natural camphor |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648834/ https://www.ncbi.nlm.nih.gov/pubmed/31459965 http://dx.doi.org/10.1021/acsomega.9b00051 |
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