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Scandium Decoration of Boron Doped Porous Graphene for High-Capacity Hydrogen Storage

The hydrogen storage properties of the Scandium (Sc) atom modified Boron (B) doped porous graphene (PG) system were studied based on the density functional theory (DFT). For a single Sc atom, the most stable adsorption position on B-PG is the boron-carbon hexagon center after doping with the B atom....

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Autores principales: Wang, Jing, Chen, Yuhong, Yuan, Lihua, Zhang, Meiling, Zhang, Cairong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6651430/
https://www.ncbi.nlm.nih.gov/pubmed/31252605
http://dx.doi.org/10.3390/molecules24132382
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author Wang, Jing
Chen, Yuhong
Yuan, Lihua
Zhang, Meiling
Zhang, Cairong
author_facet Wang, Jing
Chen, Yuhong
Yuan, Lihua
Zhang, Meiling
Zhang, Cairong
author_sort Wang, Jing
collection PubMed
description The hydrogen storage properties of the Scandium (Sc) atom modified Boron (B) doped porous graphene (PG) system were studied based on the density functional theory (DFT). For a single Sc atom, the most stable adsorption position on B-PG is the boron-carbon hexagon center after doping with the B atom. The corresponding adsorption energy of Sc atoms was −4.004 eV. Meanwhile, five H(2) molecules could be adsorbed around a Sc atom with the average adsorption energy of −0.515 eV/H(2). Analyzing the density of states (DOS) and the charge population of the system, the adsorption of H(2) molecules in Sc-B/PG system is mainly attributed to an orbital interaction between H and Sc atoms. For the H(2) adsorption, the Coulomb attraction between H(2) molecules (negatively charged) and Sc atoms (positively charged) also played a critical role. The largest hydrogen storage capacity structure was two Sc atoms located at two sides of the boron-carbon hexagon center in the Sc-B/PG system. Notably, the theoretical hydrogen storage capacity was 9.13 wt.% with an average adsorption energy of −0.225 eV/H(2). B doped PG prevents the Sc atom aggregating and improves the hydrogen storage effectively because it can increase the adsorption energy of the Sc atom and H(2) molecule.
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spelling pubmed-66514302019-08-08 Scandium Decoration of Boron Doped Porous Graphene for High-Capacity Hydrogen Storage Wang, Jing Chen, Yuhong Yuan, Lihua Zhang, Meiling Zhang, Cairong Molecules Article The hydrogen storage properties of the Scandium (Sc) atom modified Boron (B) doped porous graphene (PG) system were studied based on the density functional theory (DFT). For a single Sc atom, the most stable adsorption position on B-PG is the boron-carbon hexagon center after doping with the B atom. The corresponding adsorption energy of Sc atoms was −4.004 eV. Meanwhile, five H(2) molecules could be adsorbed around a Sc atom with the average adsorption energy of −0.515 eV/H(2). Analyzing the density of states (DOS) and the charge population of the system, the adsorption of H(2) molecules in Sc-B/PG system is mainly attributed to an orbital interaction between H and Sc atoms. For the H(2) adsorption, the Coulomb attraction between H(2) molecules (negatively charged) and Sc atoms (positively charged) also played a critical role. The largest hydrogen storage capacity structure was two Sc atoms located at two sides of the boron-carbon hexagon center in the Sc-B/PG system. Notably, the theoretical hydrogen storage capacity was 9.13 wt.% with an average adsorption energy of −0.225 eV/H(2). B doped PG prevents the Sc atom aggregating and improves the hydrogen storage effectively because it can increase the adsorption energy of the Sc atom and H(2) molecule. MDPI 2019-06-27 /pmc/articles/PMC6651430/ /pubmed/31252605 http://dx.doi.org/10.3390/molecules24132382 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wang, Jing
Chen, Yuhong
Yuan, Lihua
Zhang, Meiling
Zhang, Cairong
Scandium Decoration of Boron Doped Porous Graphene for High-Capacity Hydrogen Storage
title Scandium Decoration of Boron Doped Porous Graphene for High-Capacity Hydrogen Storage
title_full Scandium Decoration of Boron Doped Porous Graphene for High-Capacity Hydrogen Storage
title_fullStr Scandium Decoration of Boron Doped Porous Graphene for High-Capacity Hydrogen Storage
title_full_unstemmed Scandium Decoration of Boron Doped Porous Graphene for High-Capacity Hydrogen Storage
title_short Scandium Decoration of Boron Doped Porous Graphene for High-Capacity Hydrogen Storage
title_sort scandium decoration of boron doped porous graphene for high-capacity hydrogen storage
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6651430/
https://www.ncbi.nlm.nih.gov/pubmed/31252605
http://dx.doi.org/10.3390/molecules24132382
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