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Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization

Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner. Here, we report the successful pn doping in molybdenum disulfide (MoS(2)) optoelectronic device by local patterned ferroelectric pol...

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Detalles Bibliográficos
Autores principales: Lv, Liang, Zhuge, Fuwei, Xie, Fengjun, Xiong, Xujing, Zhang, Qingfu, Zhang, Nan, Huang, Yu, Zhai, Tianyou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6659647/
https://www.ncbi.nlm.nih.gov/pubmed/31350401
http://dx.doi.org/10.1038/s41467-019-11328-0
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author Lv, Liang
Zhuge, Fuwei
Xie, Fengjun
Xiong, Xujing
Zhang, Qingfu
Zhang, Nan
Huang, Yu
Zhai, Tianyou
author_facet Lv, Liang
Zhuge, Fuwei
Xie, Fengjun
Xiong, Xujing
Zhang, Qingfu
Zhang, Nan
Huang, Yu
Zhai, Tianyou
author_sort Lv, Liang
collection PubMed
description Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner. Here, we report the successful pn doping in molybdenum disulfide (MoS(2)) optoelectronic device by local patterned ferroelectric polarization, and its configuration into lateral diode and npn bipolar phototransistors for photodetection from such a versatile playground. The lateral pn diode formed in this way manifests efficient self-powered detection by separating ~12% photo-generated electrons and holes. When polarized as bipolar phototransistor, the device is customized with a gain ~1000 by its transistor action, reaching the responsivity ~12 A W(−1) and detectivity over 10(13) Jones while keeping a fast response speed within 20 μs. A promising pathway toward high performance optoelectronics is thus opened up based on local ferroelectric polarization coupled 2D semiconductors.
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spelling pubmed-66596472019-07-29 Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization Lv, Liang Zhuge, Fuwei Xie, Fengjun Xiong, Xujing Zhang, Qingfu Zhang, Nan Huang, Yu Zhai, Tianyou Nat Commun Article Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner. Here, we report the successful pn doping in molybdenum disulfide (MoS(2)) optoelectronic device by local patterned ferroelectric polarization, and its configuration into lateral diode and npn bipolar phototransistors for photodetection from such a versatile playground. The lateral pn diode formed in this way manifests efficient self-powered detection by separating ~12% photo-generated electrons and holes. When polarized as bipolar phototransistor, the device is customized with a gain ~1000 by its transistor action, reaching the responsivity ~12 A W(−1) and detectivity over 10(13) Jones while keeping a fast response speed within 20 μs. A promising pathway toward high performance optoelectronics is thus opened up based on local ferroelectric polarization coupled 2D semiconductors. Nature Publishing Group UK 2019-07-26 /pmc/articles/PMC6659647/ /pubmed/31350401 http://dx.doi.org/10.1038/s41467-019-11328-0 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Lv, Liang
Zhuge, Fuwei
Xie, Fengjun
Xiong, Xujing
Zhang, Qingfu
Zhang, Nan
Huang, Yu
Zhai, Tianyou
Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization
title Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization
title_full Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization
title_fullStr Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization
title_full_unstemmed Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization
title_short Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization
title_sort reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6659647/
https://www.ncbi.nlm.nih.gov/pubmed/31350401
http://dx.doi.org/10.1038/s41467-019-11328-0
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