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Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides

Chalcogen vacancies are generally considered to be the most common point defects in transition metal dichalcogenide (TMD) semiconductors because of their low formation energy in vacuum and their frequent observation in transmission electron microscopy studies. Consequently, unexpected optical, trans...

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Detalles Bibliográficos
Autores principales:	Barja, Sara, Refaely-Abramson, Sivan, Schuler, Bruno, Qiu, Diana Y., Pulkin, Artem, Wickenburg, Sebastian, Ryu, Hyejin, Ugeda, Miguel M., Kastl, Christoph, Chen, Christopher, Hwang, Choongyu, Schwartzberg, Adam, Aloni, Shaul, Mo, Sung-Kwan, Frank Ogletree, D., Crommie, Michael F., Yazyev, Oleg V., Louie, Steven G., Neaton, Jeffrey B., Weber-Bargioni, Alexander
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6662818/ https://www.ncbi.nlm.nih.gov/pubmed/31358753 http://dx.doi.org/10.1038/s41467-019-11342-2

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