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InGaP electron spectrometer for high temperature environments
In this work, a 200 μm diameter InGaP (GaInP) p(+)-i-n(+) mesa photodiode was studied across the temperature range 100 °C to 20 °C for the development of a temperature-tolerant electron spectrometer. The depletion layer thickness of the InGaP device was 5 μm. The performance of the InGaP detector wa...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6668469/ https://www.ncbi.nlm.nih.gov/pubmed/31366906 http://dx.doi.org/10.1038/s41598-019-47531-8 |