Cargando…
Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates
To realize the applications of graphene in electronics, a large-scale, high-quality, and uniform graphene film should first be placed on the dielectric substrates. Challenges still remain with respect to the current methods for the synthesis graphene directly on the dielectric substrates via chemica...
Autores principales: | Zhou, Lijie, Wei, Shuai, Ge, Chuanyang, Zhao, Chao, Guo, Bin, Zhang, Jia, Zhao, Jie |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669584/ https://www.ncbi.nlm.nih.gov/pubmed/31266221 http://dx.doi.org/10.3390/nano9070964 |
Ejemplares similares
-
Deposition of Uniform Nanoscale Patterns on Silicon Dioxide Based on Coaxial Jet Direct Writing
por: Shi, Shiwei, et al.
Publicado: (2023) -
Uniformity and passivation research of Al(2)O(3) film on silicon substrate prepared by plasma-enhanced atom layer deposition
por: Jia, Endong, et al.
Publicado: (2015) -
Direct Growth of Graphene Film on Germanium Substrate
por: Wang, Gang, et al.
Publicado: (2013) -
Efficient Direct Reduction of Graphene Oxide by Silicon Substrate
por: Chan Lee, Su, et al.
Publicado: (2015) -
Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates
por: Toliopoulos, Dimosthenis, et al.
Publicado: (2020)