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Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition

Cu nanowires (NWs) possess remarkable potential a slow-cost heat transfer material in modern electronic devices. However, Cu NWs with high aspect ratios undergo surface oxidation, resulting in performance degradation. A growth temperature of approximately <1000 °C is required for preventing the c...

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Autores principales: Park, Minjeong, Ahn, Seul-Ki, Hwang, Sookhyun, Park, Seongjun, Kim, Seonpil, Jeon, Minhyon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669628/
https://www.ncbi.nlm.nih.gov/pubmed/31284632
http://dx.doi.org/10.3390/nano9070984
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author Park, Minjeong
Ahn, Seul-Ki
Hwang, Sookhyun
Park, Seongjun
Kim, Seonpil
Jeon, Minhyon
author_facet Park, Minjeong
Ahn, Seul-Ki
Hwang, Sookhyun
Park, Seongjun
Kim, Seonpil
Jeon, Minhyon
author_sort Park, Minjeong
collection PubMed
description Cu nanowires (NWs) possess remarkable potential a slow-cost heat transfer material in modern electronic devices. However, Cu NWs with high aspect ratios undergo surface oxidation, resulting in performance degradation. A growth temperature of approximately <1000 °C is required for preventing the changing of Cu NW morphology by the melting of Cu NWs at over 1000 °C. In addition, nitrogen (N)-doped carbon materials coated on Cu NWs need the formation hindrance of oxides and high thermal conductivity of Cu NWs. Therefore, we investigated the N-doped graphene-coated Cu NWs (NG/Cu NWs) to enhance both the thermal conductivity and oxidation stability of Cu NWs. The Cu NWs were synthesized through an aqueous method, and ethylenediamine with an amine group induced the isotropic growth of Cu to produce Cu NWs. At that time, the amine group could be used as a growth source for the N-doped graphene on Cu NWs. To grow an N-doped graphene without changing the morphology of Cu NWs, we report a double-zone growth process at a low growth temperature of approximately 600 °C. Thermal-interface material measurements were conducted on the NG/Cu NWs to confirm their applicability as heat transfer materials. Our results show that the synthesis technology of N-doped graphene on Cu NWs could promote future research and applications of thermal interface materials in air-stable flexible electronic devices.
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spelling pubmed-66696282019-08-08 Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition Park, Minjeong Ahn, Seul-Ki Hwang, Sookhyun Park, Seongjun Kim, Seonpil Jeon, Minhyon Nanomaterials (Basel) Article Cu nanowires (NWs) possess remarkable potential a slow-cost heat transfer material in modern electronic devices. However, Cu NWs with high aspect ratios undergo surface oxidation, resulting in performance degradation. A growth temperature of approximately <1000 °C is required for preventing the changing of Cu NW morphology by the melting of Cu NWs at over 1000 °C. In addition, nitrogen (N)-doped carbon materials coated on Cu NWs need the formation hindrance of oxides and high thermal conductivity of Cu NWs. Therefore, we investigated the N-doped graphene-coated Cu NWs (NG/Cu NWs) to enhance both the thermal conductivity and oxidation stability of Cu NWs. The Cu NWs were synthesized through an aqueous method, and ethylenediamine with an amine group induced the isotropic growth of Cu to produce Cu NWs. At that time, the amine group could be used as a growth source for the N-doped graphene on Cu NWs. To grow an N-doped graphene without changing the morphology of Cu NWs, we report a double-zone growth process at a low growth temperature of approximately 600 °C. Thermal-interface material measurements were conducted on the NG/Cu NWs to confirm their applicability as heat transfer materials. Our results show that the synthesis technology of N-doped graphene on Cu NWs could promote future research and applications of thermal interface materials in air-stable flexible electronic devices. MDPI 2019-07-07 /pmc/articles/PMC6669628/ /pubmed/31284632 http://dx.doi.org/10.3390/nano9070984 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Park, Minjeong
Ahn, Seul-Ki
Hwang, Sookhyun
Park, Seongjun
Kim, Seonpil
Jeon, Minhyon
Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition
title Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition
title_full Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition
title_fullStr Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition
title_full_unstemmed Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition
title_short Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition
title_sort synthesis of nitrogen-doped graphene on copper nanowires for efficient thermal conductivity and stability by using conventional thermal chemical vapor deposition
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669628/
https://www.ncbi.nlm.nih.gov/pubmed/31284632
http://dx.doi.org/10.3390/nano9070984
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