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Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition
Cu nanowires (NWs) possess remarkable potential a slow-cost heat transfer material in modern electronic devices. However, Cu NWs with high aspect ratios undergo surface oxidation, resulting in performance degradation. A growth temperature of approximately <1000 °C is required for preventing the c...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669628/ https://www.ncbi.nlm.nih.gov/pubmed/31284632 http://dx.doi.org/10.3390/nano9070984 |
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author | Park, Minjeong Ahn, Seul-Ki Hwang, Sookhyun Park, Seongjun Kim, Seonpil Jeon, Minhyon |
author_facet | Park, Minjeong Ahn, Seul-Ki Hwang, Sookhyun Park, Seongjun Kim, Seonpil Jeon, Minhyon |
author_sort | Park, Minjeong |
collection | PubMed |
description | Cu nanowires (NWs) possess remarkable potential a slow-cost heat transfer material in modern electronic devices. However, Cu NWs with high aspect ratios undergo surface oxidation, resulting in performance degradation. A growth temperature of approximately <1000 °C is required for preventing the changing of Cu NW morphology by the melting of Cu NWs at over 1000 °C. In addition, nitrogen (N)-doped carbon materials coated on Cu NWs need the formation hindrance of oxides and high thermal conductivity of Cu NWs. Therefore, we investigated the N-doped graphene-coated Cu NWs (NG/Cu NWs) to enhance both the thermal conductivity and oxidation stability of Cu NWs. The Cu NWs were synthesized through an aqueous method, and ethylenediamine with an amine group induced the isotropic growth of Cu to produce Cu NWs. At that time, the amine group could be used as a growth source for the N-doped graphene on Cu NWs. To grow an N-doped graphene without changing the morphology of Cu NWs, we report a double-zone growth process at a low growth temperature of approximately 600 °C. Thermal-interface material measurements were conducted on the NG/Cu NWs to confirm their applicability as heat transfer materials. Our results show that the synthesis technology of N-doped graphene on Cu NWs could promote future research and applications of thermal interface materials in air-stable flexible electronic devices. |
format | Online Article Text |
id | pubmed-6669628 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-66696282019-08-08 Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition Park, Minjeong Ahn, Seul-Ki Hwang, Sookhyun Park, Seongjun Kim, Seonpil Jeon, Minhyon Nanomaterials (Basel) Article Cu nanowires (NWs) possess remarkable potential a slow-cost heat transfer material in modern electronic devices. However, Cu NWs with high aspect ratios undergo surface oxidation, resulting in performance degradation. A growth temperature of approximately <1000 °C is required for preventing the changing of Cu NW morphology by the melting of Cu NWs at over 1000 °C. In addition, nitrogen (N)-doped carbon materials coated on Cu NWs need the formation hindrance of oxides and high thermal conductivity of Cu NWs. Therefore, we investigated the N-doped graphene-coated Cu NWs (NG/Cu NWs) to enhance both the thermal conductivity and oxidation stability of Cu NWs. The Cu NWs were synthesized through an aqueous method, and ethylenediamine with an amine group induced the isotropic growth of Cu to produce Cu NWs. At that time, the amine group could be used as a growth source for the N-doped graphene on Cu NWs. To grow an N-doped graphene without changing the morphology of Cu NWs, we report a double-zone growth process at a low growth temperature of approximately 600 °C. Thermal-interface material measurements were conducted on the NG/Cu NWs to confirm their applicability as heat transfer materials. Our results show that the synthesis technology of N-doped graphene on Cu NWs could promote future research and applications of thermal interface materials in air-stable flexible electronic devices. MDPI 2019-07-07 /pmc/articles/PMC6669628/ /pubmed/31284632 http://dx.doi.org/10.3390/nano9070984 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Park, Minjeong Ahn, Seul-Ki Hwang, Sookhyun Park, Seongjun Kim, Seonpil Jeon, Minhyon Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition |
title | Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition |
title_full | Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition |
title_fullStr | Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition |
title_full_unstemmed | Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition |
title_short | Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition |
title_sort | synthesis of nitrogen-doped graphene on copper nanowires for efficient thermal conductivity and stability by using conventional thermal chemical vapor deposition |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669628/ https://www.ncbi.nlm.nih.gov/pubmed/31284632 http://dx.doi.org/10.3390/nano9070984 |
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