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Achieving Secondary Dispersion of Modified Nanoparticles by Hot-Stretching to Enhance Dielectric and Mechanical Properties of Polyarylene Ether Nitrile Composites
Enhanced dielectric and mechanical properties of polyarylene ether nitrile (PEN) are obtained through secondary dispersion of polyaniline functionalized barium titanate (PANI-f-BT) by hot-stretching. PANI-f-BT nanoparticles with different PANI content are successfully prepared via in-situ aniline po...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669864/ https://www.ncbi.nlm.nih.gov/pubmed/31336901 http://dx.doi.org/10.3390/nano9071006 |
Sumario: | Enhanced dielectric and mechanical properties of polyarylene ether nitrile (PEN) are obtained through secondary dispersion of polyaniline functionalized barium titanate (PANI-f-BT) by hot-stretching. PANI-f-BT nanoparticles with different PANI content are successfully prepared via in-situ aniline polymerization technology. The transmission electron microscopy (TEM), fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopic instrument (XPS) and Thermogravimetric analysis (TGA) results confirm that the PANI layers uniformly enclose on the surface of BaTiO(3) nanoparticles. These nanoparticles are used as functional fillers to compound with PEN (PEN/PANI-f-BT) for studying its effect on the mechanical and dielectric performance of the obtained composites. In addition, the nanocomposites are uniaxial hot-stretched by 50% and 100% at 280 °C to obtain the oriented nanocomposite films. The results exhibit that the PANI-f-BT nanoparticles present good compatibility and dispersion in the PEN matrix, and the hot-stretching endows the second dispersion of PANI-f-BT in PEN resulting in enhanced mechanical properties, crystallinity and permittivity-temperature stability of the nanocomposites. The excellent performances of the nanocomposites indicate that a new approach for preparing high-temperature-resistant dielectric films is provided. |
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