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An efficient Terahertz rectifier on the graphene/SiC materials platform

We present an efficient Schottky-diode detection scheme for Terahertz (THz) radiation, implemented on the material system epitaxial graphene on silicon carbide (SiC). It employs SiC as semiconductor and graphene as metal, with an epitaxially defined interface. For first prototypes, we report on broa...

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Detalles Bibliográficos
Autores principales: Schlecht, Maria T., Preu, Sascha, Malzer, Stefan, Weber, Heiko B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6671971/
https://www.ncbi.nlm.nih.gov/pubmed/31371741
http://dx.doi.org/10.1038/s41598-019-47606-6
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author Schlecht, Maria T.
Preu, Sascha
Malzer, Stefan
Weber, Heiko B.
author_facet Schlecht, Maria T.
Preu, Sascha
Malzer, Stefan
Weber, Heiko B.
author_sort Schlecht, Maria T.
collection PubMed
description We present an efficient Schottky-diode detection scheme for Terahertz (THz) radiation, implemented on the material system epitaxial graphene on silicon carbide (SiC). It employs SiC as semiconductor and graphene as metal, with an epitaxially defined interface. For first prototypes, we report on broadband operation up to 580 GHz, limited only by the RC circuitry, with a responsivity of 1.1 A/W. Remarkably, the voltage dependence of the THz responsivity displays no deviations from DC responsivity, which encourages using this transparent device for exploring the high frequency limits of Schottky rectification in the optical regime. The performance of the detector is demonstrated by resolving sharp spectroscopic features of ethanol and acetone in a THz transmission experiment.
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spelling pubmed-66719712019-08-07 An efficient Terahertz rectifier on the graphene/SiC materials platform Schlecht, Maria T. Preu, Sascha Malzer, Stefan Weber, Heiko B. Sci Rep Article We present an efficient Schottky-diode detection scheme for Terahertz (THz) radiation, implemented on the material system epitaxial graphene on silicon carbide (SiC). It employs SiC as semiconductor and graphene as metal, with an epitaxially defined interface. For first prototypes, we report on broadband operation up to 580 GHz, limited only by the RC circuitry, with a responsivity of 1.1 A/W. Remarkably, the voltage dependence of the THz responsivity displays no deviations from DC responsivity, which encourages using this transparent device for exploring the high frequency limits of Schottky rectification in the optical regime. The performance of the detector is demonstrated by resolving sharp spectroscopic features of ethanol and acetone in a THz transmission experiment. Nature Publishing Group UK 2019-08-01 /pmc/articles/PMC6671971/ /pubmed/31371741 http://dx.doi.org/10.1038/s41598-019-47606-6 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Schlecht, Maria T.
Preu, Sascha
Malzer, Stefan
Weber, Heiko B.
An efficient Terahertz rectifier on the graphene/SiC materials platform
title An efficient Terahertz rectifier on the graphene/SiC materials platform
title_full An efficient Terahertz rectifier on the graphene/SiC materials platform
title_fullStr An efficient Terahertz rectifier on the graphene/SiC materials platform
title_full_unstemmed An efficient Terahertz rectifier on the graphene/SiC materials platform
title_short An efficient Terahertz rectifier on the graphene/SiC materials platform
title_sort efficient terahertz rectifier on the graphene/sic materials platform
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6671971/
https://www.ncbi.nlm.nih.gov/pubmed/31371741
http://dx.doi.org/10.1038/s41598-019-47606-6
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