Improved Efficiency of Perovskite Light-Emitting Diodes Using a Three-Step Spin-Coated CH(3)NH(3)PbBr(3) Emitter and a PEDOT:PSS/MoO(3)-Ammonia Composite Hole Transport Layer

High efficiency perovskite light-emitting diodes (PeLEDs) using PEDOT:PSS/MoO(3)-ammonia composite hole transport layers (HTLs) with different MoO(3)-ammonia ratios were prepared and characterized. For PeLEDs with one-step spin-coated CH(3)NH(3)PbBr(3) emitter, an optimal MoO(3)-ammonia volume ratio (0.02) in PEDOT:PSS/MoO(3)-ammonia composite HTL presented a maximum luminance of 1082 cd/m(2) and maximum current efficiency of 0.7 cd/A, which are 82% and 94% higher than those of the control device using pure PEDOT:PSS HTL respectively. It can be explained by that the optimized amount of MoO(3)-ammonia in the composite HTLs cannot only facilitate hole injection into CH(3)NH(3)PbBr(3) through reducing the contact barrier, but also suppress the exciton quenching at the HTL/CH(3)NH(3)PbBr(3) interface. Three-step spin coating method was further used to obtain uniform and dense CH(3)NH(3)PbBr(3) films, which lead to a maximum luminance of 5044 cd/m(2) and maximum current efficiency of 3.12 cd/A, showing enhancement of 750% and 767% compared with the control device respectively. The significantly improved efficiency of PeLEDs using three-step spin-coated CH(3)NH(3)PbBr(3) film and an optimum PEDOT:PSS/MoO(3)-ammonia composite HTL can be explained by the enhanced carrier recombination through better hole injection and film morphology optimization, as well as the reduced exciton quenching at HTL/CH(3)NH(3)PbBr(3) interface. These results present a promising strategy for the device engineering of high efficiency PeLEDs.