Effect of Annealing Temperature for Ni/AlO(x)/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Resistive random access memory (RRAM) devices with Ni/AlO(x)/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlO(x)) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar...

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Detalles Bibliográficos
Autores principales: Shen, Zongjie, Qi, Yanfei, Mitrovic, Ivona Z., Zhao, Cezhou, Hall, Steve, Yang, Li, Luo, Tian, Huang, Yanbo, Zhao, Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680579/
https://www.ncbi.nlm.nih.gov/pubmed/31269730
http://dx.doi.org/10.3390/mi10070446

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680579/
https://www.ncbi.nlm.nih.gov/pubmed/31269730
http://dx.doi.org/10.3390/mi10070446

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