Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material

In the following study, we propose optical memristive switches consisting of a silicon waveguide integrated with phase-change material Ge(2)Sb(2)Te(5) (GST). Thanks to its high refractive index contrast between the crystalline and amorphous states, a miniature-size GST material can offer a high swit...

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Detalles Bibliográficos
Autores principales: Wang, Ningning, Zhang, Hanyu, Zhou, Linjie, Lu, Liangjun, Chen, Jianping, Rahman, B.M.A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680807/
https://www.ncbi.nlm.nih.gov/pubmed/31284371
http://dx.doi.org/10.3390/mi10070453
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author Wang, Ningning
Zhang, Hanyu
Zhou, Linjie
Lu, Liangjun
Chen, Jianping
Rahman, B.M.A.
author_facet Wang, Ningning
Zhang, Hanyu
Zhou, Linjie
Lu, Liangjun
Chen, Jianping
Rahman, B.M.A.
author_sort Wang, Ningning
collection PubMed
description In the following study, we propose optical memristive switches consisting of a silicon waveguide integrated with phase-change material Ge(2)Sb(2)Te(5) (GST). Thanks to its high refractive index contrast between the crystalline and amorphous states, a miniature-size GST material can offer a high switching extinction ratio. We optimize the device design by using finite-difference-time-domain (FDTD) simulations. A device with a length of 4.7 μm including silicon waveguide tapers exhibits a high extinction ratio of 33.1 dB and a low insertion loss of 0.48 dB around the 1550 nm wavelength. The operation bandwidth of the device is around 60 nm.
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spelling pubmed-66808072019-08-09 Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material Wang, Ningning Zhang, Hanyu Zhou, Linjie Lu, Liangjun Chen, Jianping Rahman, B.M.A. Micromachines (Basel) Article In the following study, we propose optical memristive switches consisting of a silicon waveguide integrated with phase-change material Ge(2)Sb(2)Te(5) (GST). Thanks to its high refractive index contrast between the crystalline and amorphous states, a miniature-size GST material can offer a high switching extinction ratio. We optimize the device design by using finite-difference-time-domain (FDTD) simulations. A device with a length of 4.7 μm including silicon waveguide tapers exhibits a high extinction ratio of 33.1 dB and a low insertion loss of 0.48 dB around the 1550 nm wavelength. The operation bandwidth of the device is around 60 nm. MDPI 2019-07-05 /pmc/articles/PMC6680807/ /pubmed/31284371 http://dx.doi.org/10.3390/mi10070453 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wang, Ningning
Zhang, Hanyu
Zhou, Linjie
Lu, Liangjun
Chen, Jianping
Rahman, B.M.A.
Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material
title Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material
title_full Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material
title_fullStr Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material
title_full_unstemmed Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material
title_short Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material
title_sort design of ultra-compact optical memristive switches with gst as the active material
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680807/
https://www.ncbi.nlm.nih.gov/pubmed/31284371
http://dx.doi.org/10.3390/mi10070453
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