Improved MRD 4H-SiC MESFET with High Power Added Efficiency

An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software i...

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Detalles Bibliográficos
Autores principales: Zhu, Shunwei, Jia, Hujun, Wang, Xingyu, Liang, Yuan, Tong, Yibo, Li, Tao, Yang, Yintang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680998/
https://www.ncbi.nlm.nih.gov/pubmed/31319511
http://dx.doi.org/10.3390/mi10070479

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680998/
https://www.ncbi.nlm.nih.gov/pubmed/31319511
http://dx.doi.org/10.3390/mi10070479

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