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Improved MRD 4H-SiC MESFET with High Power Added Efficiency

An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software i...

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Detalles Bibliográficos
Autores principales:	Zhu, Shunwei, Jia, Hujun, Wang, Xingyu, Liang, Yuan, Tong, Yibo, Li, Tao, Yang, Yintang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680998/ https://www.ncbi.nlm.nih.gov/pubmed/31319511 http://dx.doi.org/10.3390/mi10070479

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