Cargando…

Direct atomic insight into the role of dopants in phase-change materials

Doping is indispensable to tailor phase-change materials (PCM) in optical and electronic data storage. Very few experimental studies, however, have provided quantitative information on the distribution of dopants on the atomic-scale. Here, we present atom-resolved images of Ag and In dopants in Sb(2...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zhu, Min, Song, Wenxiong, Konze, Philipp M., Li, Tao, Gault, Baptiste, Chen, Xin, Shen, Jiabin, Lv, Shilong, Song, Zhitang, Wuttig, Matthias, Dronskowski, Richard
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6684653/ https://www.ncbi.nlm.nih.gov/pubmed/31388013 http://dx.doi.org/10.1038/s41467-019-11506-0

Ejemplares similares

Atomic scale insight into the effects of Aluminum doped Sb(2)Te for phase change memory application
por: Wang, Yong, et al.
Publicado: (2018)

Vibrational properties and bonding nature of Sb(2)Se(3) and their implications for chalcogenide materials
por: Deringer, Volker L., et al.
Publicado: (2015)

Deep Learning‐Assisted Quantification of Atomic Dopants and Defects in 2D Materials
por: Yang, Sang‐Hyeok, et al.
Publicado: (2021)

Ta-Doped Sb(2)Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics
por: Xue, Yuan, et al.
Publicado: (2021)

Mechanism of Electron-Beam Manipulation of Single-Dopant Atoms in Silicon
por: Markevich, Alexander, et al.
Publicado: (2021)

Atom devices based on single dopants in silicon nanostructures
por: Moraru, Daniel, et al.
Publicado: (2011)

Quantum simulation of the Hubbard model with dopant atoms in silicon
por: Salfi, J., et al.
Publicado: (2016)

Effects of stoichiometry on the transport properties of crystalline phase-change materials
por: Zhang, Wei, et al.
Publicado: (2015)

Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor
por: Hunnestad, K. A., et al.
Publicado: (2022)

Low-Energy Amorphization of Ti(1)Sb(2)Te(5) Phase Change Alloy Induced by TiTe(2) Nano-Lamellae
por: Ding, Keyuan, et al.
Publicado: (2016)

Dopant Evolution in Electrocatalysts after Hydrogen Oxidation Reaction in an Alkaline Environment
por: Yoo, Su-Hyun, et al.
Publicado: (2023)

Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
por: Moraru, Daniel, et al.
Publicado: (2015)

Dopant triggered atomic configuration activates water splitting to hydrogen
por: Wu, Rui, et al.
Publicado: (2023)

Early target material research with chemical dopants
por: Mango, S
Publicado: (2004)

Direct observation of titanium-centered octahedra in titanium–antimony–tellurium phase-change material
por: Rao, Feng, et al.
Publicado: (2015)

Relation between bandgap and resistance drift in amorphous phase change materials
por: Rütten, Martin, et al.
Publicado: (2015)

Rules of hierarchical melt and coordinate bond to design crystallization in doped phase change materials
por: Zhao, Jin, et al.
Publicado: (2021)

Direct evidence of Be as an amphoteric dopant in GaN
por: Wahl, U., et al.
Publicado: (2022)

Electrical activation of dopant atoms in the II-VI materials M-X (M = Zn, Cd and X = S, Se, Te)
por: Burchard, A, et al.
Publicado: (1993)

Electrical activation of dopant atoms in the II-VI materials M-X (M=Zn, Cd and X=S, Se, Te)
por: Burchard, A, et al.
Publicado: (1996)

Atomically-precise dopant-controlled single cluster catalysis for electrochemical nitrogen reduction
por: Yao, Chuanhao, et al.
Publicado: (2020)

Tuning Single-Atom Dopants on Manganese Oxide for Selective Electrocatalytic Cyclooctene Epoxidation
por: Chung, Minju, et al.
Publicado: (2022)

Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform
por: Røst, Håkon I., et al.
Publicado: (2023)

Uncovering β-relaxations in amorphous phase-change materials
por: Peng, Si-Xu, et al.
Publicado: (2020)

Advantages of Ta-Doped Sb(3)Te(1) Materials for Phase Change Memory Applications
por: Shao, Mingyue, et al.
Publicado: (2023)

Performance improvement of phase-change memory cell using AlSb(3)Te and atomic layer deposition TiO(2) buffer layer
por: Song, Sannian, et al.
Publicado: (2013)

Dynamics of Pd Dopant Atoms inside Au Nanoclusters during Catalytic CO Oxidation
por: Garcia, Clara, et al.
Publicado: (2020)

Direct evidence for substitutional ion-implanted indium dopants in silicon
por: Lindner, G, et al.
Publicado: (1986)

The Orbital Origins of Chemical Bonding in Ge−Sb−Te Phase‐Change Materials
por: Hempelmann, Jan, et al.
Publicado: (2022)

The influence of dopants on aW-phase antimonene: theoretical investigations
por: Zhou, Qingxiao, et al.
Publicado: (2020)

Measurement of crystal growth velocity in a melt-quenched phase-change material
por: Salinga, Martin, et al.
Publicado: (2013)

One order of magnitude faster phase change at reduced power in Ti-Sb-Te
por: Zhu, Min, et al.
Publicado: (2014)

Atomically precise copper dopants in metal clusters boost up stability, fluorescence, and photocatalytic activity
por: Zhang, Yifei, et al.
Publicado: (2023)

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography
por: Wu, Yizhi, et al.
Publicado: (2018)

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
por: Song, Sannian, et al.
Publicado: (2015)

Atom probe analysis of electrode materials for Li-ion batteries: challenges and ways forward
por: Kim, Se-Ho, et al.
Publicado: (2022)

Gas phase Fourier transform-infrared spectroscopy of dopants for noble liquids
por: Moulson, M, et al.
Publicado: (1991)

Correlating advanced microscopies reveals atomic-scale mechanisms limiting lithium-ion battery lifetime
por: Gault, Baptiste, et al.
Publicado: (2021)

Laser-equipped gas reaction chamber for probing environmentally sensitive materials at near atomic scale
por: Khanchandani, Heena, et al.
Publicado: (2022)

Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application
por: Zhang, Jiarui, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_p7q0a4jak1aop95ufpqtuneuio