Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a thin p-AlGaN layer into the n-AlGaN electron supplier laye...

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Detalles Bibliográficos
Autores principales: Che, Jiamang, Shao, Hua, Kou, Jianquan, Tian, Kangkai, Chu, Chunshuang, Hou, Xu, Zhang, Yonghui, Sun, Qian, Zhang, Zi-Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6684732/
https://www.ncbi.nlm.nih.gov/pubmed/31388778
http://dx.doi.org/10.1186/s11671-019-3078-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6684732/
https://www.ncbi.nlm.nih.gov/pubmed/31388778
http://dx.doi.org/10.1186/s11671-019-3078-8

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