High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study

Two-dimensional (2D) InSe-based field effect transistor (FET) has shown remarkable carrier mobility and high on-off ratio in experimental reports. Theoretical investigations also predicated the high performance can be well preserved at sub-10 nm nodes in the ballistic limit. However, both experiment...

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Detalles Bibliográficos
Autores principales: Zhu, Jiaduo, Ning, Jing, Wang, Dong, Zhang, Jincheng, Guo, Lixin, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695462/
https://www.ncbi.nlm.nih.gov/pubmed/31418092
http://dx.doi.org/10.1186/s11671-019-3106-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695462/
https://www.ncbi.nlm.nih.gov/pubmed/31418092
http://dx.doi.org/10.1186/s11671-019-3106-8

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