Cargando…
Thickness-Dependence Electrical Characterization of the One-Dimensional van der Waals TaSe(3) Crystal
Needle-like single crystalline wires of TaSe(3) were massively synthesized using the chemical vapor transport method. Since the wedged-shaped single TaSe(3) molecular chains were stacked along the b-axis by weak van der Waals interactions, a few layers of TaSe(3) flakes could be easily isolated usin...
Autores principales: | , , , , , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695938/ https://www.ncbi.nlm.nih.gov/pubmed/31382412 http://dx.doi.org/10.3390/ma12152462 |
_version_ | 1783444152452644864 |
---|---|
author | Kim, Bum Jun Jeong, Byung Joo Oh, Seungbae Chae, Sudong Choi, Kyung Hwan Nasir, Tuqeer Lee, Sang Hoon Lim, Hyung Kyu Choi, Ik Jun Hong, Min-Ki Yu, Hak Ki Lee, Jae-Hyun Choi, Jae-Young |
author_facet | Kim, Bum Jun Jeong, Byung Joo Oh, Seungbae Chae, Sudong Choi, Kyung Hwan Nasir, Tuqeer Lee, Sang Hoon Lim, Hyung Kyu Choi, Ik Jun Hong, Min-Ki Yu, Hak Ki Lee, Jae-Hyun Choi, Jae-Young |
author_sort | Kim, Bum Jun |
collection | PubMed |
description | Needle-like single crystalline wires of TaSe(3) were massively synthesized using the chemical vapor transport method. Since the wedged-shaped single TaSe(3) molecular chains were stacked along the b-axis by weak van der Waals interactions, a few layers of TaSe(3) flakes could be easily isolated using a typical mechanical exfoliation method. The exfoliated TaSe(3) flakes had an anisotropic planar structure, and the number of layers could be controlled by a repeated peeling process until a monolayer of TaSe(3) nanoribbon was obtained. Through atomic force and scanning Kelvin probe microscope analyses, it was found that the variation in the work function with the thickness of the TaSe(3) flakes was due to the interlayer screening effect. We believe that our results will not only help to add a novel quasi-1D block for nanoelectronics devices based on 2D van der Waals heterostructures, but also provide crucial information for designing proper contacts in device architecture. |
format | Online Article Text |
id | pubmed-6695938 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-66959382019-09-05 Thickness-Dependence Electrical Characterization of the One-Dimensional van der Waals TaSe(3) Crystal Kim, Bum Jun Jeong, Byung Joo Oh, Seungbae Chae, Sudong Choi, Kyung Hwan Nasir, Tuqeer Lee, Sang Hoon Lim, Hyung Kyu Choi, Ik Jun Hong, Min-Ki Yu, Hak Ki Lee, Jae-Hyun Choi, Jae-Young Materials (Basel) Article Needle-like single crystalline wires of TaSe(3) were massively synthesized using the chemical vapor transport method. Since the wedged-shaped single TaSe(3) molecular chains were stacked along the b-axis by weak van der Waals interactions, a few layers of TaSe(3) flakes could be easily isolated using a typical mechanical exfoliation method. The exfoliated TaSe(3) flakes had an anisotropic planar structure, and the number of layers could be controlled by a repeated peeling process until a monolayer of TaSe(3) nanoribbon was obtained. Through atomic force and scanning Kelvin probe microscope analyses, it was found that the variation in the work function with the thickness of the TaSe(3) flakes was due to the interlayer screening effect. We believe that our results will not only help to add a novel quasi-1D block for nanoelectronics devices based on 2D van der Waals heterostructures, but also provide crucial information for designing proper contacts in device architecture. MDPI 2019-08-02 /pmc/articles/PMC6695938/ /pubmed/31382412 http://dx.doi.org/10.3390/ma12152462 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Kim, Bum Jun Jeong, Byung Joo Oh, Seungbae Chae, Sudong Choi, Kyung Hwan Nasir, Tuqeer Lee, Sang Hoon Lim, Hyung Kyu Choi, Ik Jun Hong, Min-Ki Yu, Hak Ki Lee, Jae-Hyun Choi, Jae-Young Thickness-Dependence Electrical Characterization of the One-Dimensional van der Waals TaSe(3) Crystal |
title | Thickness-Dependence Electrical Characterization of the One-Dimensional van der Waals TaSe(3) Crystal |
title_full | Thickness-Dependence Electrical Characterization of the One-Dimensional van der Waals TaSe(3) Crystal |
title_fullStr | Thickness-Dependence Electrical Characterization of the One-Dimensional van der Waals TaSe(3) Crystal |
title_full_unstemmed | Thickness-Dependence Electrical Characterization of the One-Dimensional van der Waals TaSe(3) Crystal |
title_short | Thickness-Dependence Electrical Characterization of the One-Dimensional van der Waals TaSe(3) Crystal |
title_sort | thickness-dependence electrical characterization of the one-dimensional van der waals tase(3) crystal |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695938/ https://www.ncbi.nlm.nih.gov/pubmed/31382412 http://dx.doi.org/10.3390/ma12152462 |
work_keys_str_mv | AT kimbumjun thicknessdependenceelectricalcharacterizationoftheonedimensionalvanderwaalstase3crystal AT jeongbyungjoo thicknessdependenceelectricalcharacterizationoftheonedimensionalvanderwaalstase3crystal AT ohseungbae thicknessdependenceelectricalcharacterizationoftheonedimensionalvanderwaalstase3crystal AT chaesudong thicknessdependenceelectricalcharacterizationoftheonedimensionalvanderwaalstase3crystal AT choikyunghwan thicknessdependenceelectricalcharacterizationoftheonedimensionalvanderwaalstase3crystal AT nasirtuqeer thicknessdependenceelectricalcharacterizationoftheonedimensionalvanderwaalstase3crystal AT leesanghoon thicknessdependenceelectricalcharacterizationoftheonedimensionalvanderwaalstase3crystal AT limhyungkyu thicknessdependenceelectricalcharacterizationoftheonedimensionalvanderwaalstase3crystal AT choiikjun thicknessdependenceelectricalcharacterizationoftheonedimensionalvanderwaalstase3crystal AT hongminki thicknessdependenceelectricalcharacterizationoftheonedimensionalvanderwaalstase3crystal AT yuhakki thicknessdependenceelectricalcharacterizationoftheonedimensionalvanderwaalstase3crystal AT leejaehyun thicknessdependenceelectricalcharacterizationoftheonedimensionalvanderwaalstase3crystal AT choijaeyoung thicknessdependenceelectricalcharacterizationoftheonedimensionalvanderwaalstase3crystal |